Compound semiconductor substrate and process of producing same

Details Compound semiconductor substrate and process of producing same Compound semiconductor substrate and process of producing same

1996-01-16

1998-11-10

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117902, 438293, 438292, C30B 2518

Patent

active

058337490

ABSTRACT:
A compound semiconductor substrate having at least one compound semiconductor layer epitaxially grown on a silicon single crystal substrate, wherein the silicon single crystal substrate has a surface on which the compound semiconductor layer is epitaxially grown, the surface being inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; and the compound semiconductor layer has a free or top surface having a roughness of 3 nm or less in terms of a mean square roughness, Rms, determined by an atomic force microscopic measurement in a view field area of 10 .mu.m.times.10 .mu.m or a roughness of 10.5 nm or less in terms of a maximum height difference, Ry.
The compound semiconductor substrate is produced by a process comprising the steps of: preparing a silicon single crystal substrate having a surface inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; forming a buffer layer of a first compound semiconductor layer having a thickness of 5 nm to 15 nm on the surface of the silicon single crystal substrate; and epitaxially growing a second compound semiconductor layer on the buffer layer.

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Fujita et al., "AsH3 Preflow Effects . . . ", Appl. Phys. Lett., 59(26), 23 Dec. 1991, pp. 3458-3460.
Ohkubo et al., "New MOCVD Growth . . . ", Paper Presented at Int. Symp. GaAs and Related Compounds, Karuizawa, 1992, pp. 187-192.

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