Compound semiconductor optoelectronic device

Details Compound semiconductor optoelectronic device Compound semiconductor optoelectronic device

2006-05-02

2006-05-02

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

C438S046000, C438S047000, C438S780000

Reexamination Certificate

active

07037741

ABSTRACT:
A method for manufacturing a compound semiconductor optoelectronic device is proposed. There are steps of: forming an optoelectronic device epitaxial wafer, the optoelectronic device epitaxial wafer containing a V-shaped pit due to threading dislocation; forming an insulated isolation material in the V-shaped pit of the optoelectronic device epitaxial wafer; and forming an electrode layer on the optoelectronic device epitaxial wafer having the insulated isolation material in the V-shaped pit for completing the optoelectronic device.

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