Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-05
2011-07-05
Jackson, Jr., Jerome (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S098000, C257S749000, C257SE31126, C257SE33064, C257S098000
Reexamination Certificate
active
07972952
ABSTRACT:
A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.
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Fukunaga Naoki
Shinohara Hironao
Jackson, Jr. Jerome
Showa Denko K.K.
Sughrue & Mion, PLLC
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