Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-08-09
1994-12-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257453, 257458, 257473, H01L 2948
Patent
active
053713990
ABSTRACT:
A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
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Burroughes Jeremy
Hodgson Rodney T.
McInturff David T.
Melloch Michael R.
Otsuka Nobuo
Crane Sara W.
International Business Machines - Corporation
Purdue Research Foundation
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