Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1996-04-24
1997-12-16
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257 66, 257 76, 257192, 257245, 257249, 257254, 257284, 257472, 257773, H01L 2982
Patent
active
056988885
ABSTRACT:
A metal-semiconductor type field effect transistor has a Y-letter shaped gate electrode standing on an active layer, and the Y-letter shaped gate electrode prevents piezoelectric charges induced beneath both ends of the wing portions thereof from undesirable merger so as to restrict variation of the threshold regardless of the orientation of the Y-letter shaped gate electrode.
REFERENCES:
"Piexoelectric Effects i GaAs FET's and Their Role in Orientation-Dependent Device Characteristics" Asbeck et al IEEE Transactions on Electron Devices, vol. ED-31, No. 10, Oct. 1984; pp. 1377-1380.
"Theoretical Study of th Piezoelectric Effect on GaAs MESFET's on (100), (011), and (111) Ga, and (111) As Substrates" Onodera et al; IEEE Transactions on Electron Devices, vol. 36, No. 9; Sep. 1989; pp. 1580-1584.
"Experimental Sudy of the Orientation Effect of GaAs MESFET's Fabricated on (100), (011), and (111) Ga, and (111) As Substrates" Onodera et al; IEEE Transactions On Electron Devices, vol. 36; No. 9; Sep. 1989; pp. 1586-1590 .
NEC Corporation
Wojciechowicz Edward
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