Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-12-25
2007-12-25
Nguyen, Thanh T. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S085000, C257S200000, C257S615000
Reexamination Certificate
active
10466185
ABSTRACT:
In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the metal nitride layer. When a Ti layer is formed between the metal nitride layer having a sufficient thickness and a substrate and the titanium layer is removed, a Group III nitride compound semiconductor device using metal nitride as a substrate can be obtained.
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Chiyo Toshiaki
Ito Jun
Shibata Naoki
McGinn IP Law Group PLLC
Nguyen Thanh T.
Toyoda Gosei Co,., Ltd.
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