Compound semiconductor device using SiC substrate and its...

Details Compound semiconductor device using SiC substrate and its... Compound semiconductor device using SiC substrate and its...

2011-01-25

2011-01-25

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C257SE21091, C257SE21093, C257S104000

Reexamination Certificate

active

07875535

ABSTRACT:
A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers formed above said compound semiconductor buffer layer not containing Cl.

REFERENCES:
patent: 6703649 (2004-03-01), Shibata et al.
patent: 2002-359255 (2002-12-01), None
patent: 2003-309071 (2003-10-01), None
patent: 2004-524690 (2004-08-01), None
patent: 2004-342810 (2004-12-01), None
patent: 2005-252248 (2005-09-01), None
patent: 02/069376 (2002-09-01), None
patent: PCT/US01/06279 (2002-09-01), None
Partial Translation of International Search Report Written Opinion on the International Searching Authority of PCT/JP2006/314743.
International Search Report of PCT/JP2006/314743, date of mailing Oct. 31, 2006.

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