Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2008-02-13
2011-11-22
Ahmadi, Mohsen (Department: 2812)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S022000, C438S033000, C438S046000, C438S068000, C438S463000, C257SE21002, C257SE21237, C257SE21238, C257SE21599, C257SE21600
Reexamination Certificate
active
08062960
ABSTRACT:
The present invention provides a method of manufacturing a compound semiconductor device capable of improving yield when a wafer is divided into device regions. The method of manufacturing a compound semiconductor device includes a division step. The division step includes: a first division step of dividing a wafer30in a first direction α to obtain first strip wafers each having at least two rows of device portions10arranged in the first direction α; a second division step of dividing the first strip wafer in a second direction β to obtain second strip wafers each having a row of the device portions10arranged in the second direction β; and a third division step of dividing the second strip wafer into the device portions10, thereby forming compound semiconductor devices including the device portions10.
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Ahmadi Mohsen
Showa Denko K.K.
Sughrue & Mion, PLLC
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