Compound semiconductor device and method of manufacturing...

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

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C438S022000, C438S033000, C438S046000, C438S068000, C438S463000, C257SE21002, C257SE21237, C257SE21238, C257SE21599, C257SE21600

Reexamination Certificate

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08062960

ABSTRACT:
The present invention provides a method of manufacturing a compound semiconductor device capable of improving yield when a wafer is divided into device regions. The method of manufacturing a compound semiconductor device includes a division step. The division step includes: a first division step of dividing a wafer30in a first direction α to obtain first strip wafers each having at least two rows of device portions10arranged in the first direction α; a second division step of dividing the first strip wafer in a second direction β to obtain second strip wafers each having a row of the device portions10arranged in the second direction β; and a third division step of dividing the second strip wafer into the device portions10, thereby forming compound semiconductor devices including the device portions10.

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