Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-11-03
2009-02-24
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S167000, C438S191000, C438S604000, C438S606000, C257SE21403, C257SE21407
Reexamination Certificate
active
07494855
ABSTRACT:
The compound semiconductor device comprises an i-GaN buffer layer12formed on an SiC substrate10; an n-AlGaN electron supplying layer16formed on the i-GaN buffer layer12; an n-GaN cap layer18formed on the n-AlGaN electron supplying layer16; a source electrode20and a drain electrode22formed on the n-GaN cap layer18; a gate electrode26formed on the n-GaN cap layer18between the source electrode20and the drain electrode22; a first protection layer24formed on the n-GaN cap layer18between the source electrode20and the drain electrode22; and a second protection layer30buried in an opening28formed in the first protection layer24between the gate electrode26and the drain electrode22down to the n-GaN cap layer18and formed of an insulation film different from the first protection layer.
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Japanese Office Action dated Oct. 24, 2007.
Translation of Japanese Office Actions dated Oct. 30, 2007 and May 13, 2008 for a corresponding application.
Estrada Michelle
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Stark Jarrett J
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