Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2011-08-02
2011-08-02
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C257SE21403, C257SE21407
Reexamination Certificate
active
07989278
ABSTRACT:
The compound semiconductor device comprises an i-GaN buffer layer12formed on an SiC substrate10; an n-AlGaN electron supplying layer16formed on the i-GaN buffer layer12; an n-GaN cap layer18formed on the n-AlGaN electron supplying layer16; a source electrode20and a drain electrode22formed on the n-GaN cap layer18; a gate electrode26formed on the n-GaN cap layer18between the source electrode20and the drain electrode22; a first protection layer24formed on the n-GaN cap layer18between the source electrode20and the drain electrode22; and a second protection layer30buried in an opening28formed in the first protection layer24between the gate electrode26and the drain electrode22down to the n-GaN cap layer18and formed of an insulation film different from the first protection layer.
REFERENCES:
patent: 5182670 (1993-01-01), Khan et al.
patent: 5714006 (1998-02-01), Kizuki et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6013926 (2000-01-01), Oku et al.
patent: 6091083 (2000-07-01), Hata et al.
patent: 6159861 (2000-12-01), Asai et al.
patent: 6165812 (2000-12-01), Ishibashi et al.
patent: 6177685 (2001-01-01), Teraguchi et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 7033961 (2006-04-01), Smart et al.
patent: 2002/0017696 (2002-02-01), Nakayama et al.
patent: 2002/0100418 (2002-08-01), Sandhu et al.
patent: 2002/0171405 (2002-11-01), Watanabe
patent: 2005/0077541 (2005-04-01), Shen et al.
patent: 2006/0043415 (2006-03-01), Okamoto et al.
patent: 2006/0102929 (2006-05-01), Okamoto et al.
patent: 2006/0163594 (2006-07-01), Kuzmik
patent: 63-281471 (1988-11-01), None
patent: 07-014851 (1995-01-01), None
patent: 2001210657 (2001-08-01), None
patent: 2002-100639 (2002-04-01), None
patent: 2002-110702 (2002-04-01), None
patent: 2002-359256 (2002-12-01), None
patent: 2004214471 (2004-07-01), None
Japanese Office Action dated Oct. 30, 2007.
Translation of Japanese Office Action dated Oct. 30, 2007.
Translation of Japanese Office Action dated May 13, 2008.
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Stark Jarrett J
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