Compound semiconductor device and manufacturing method thereof

Details Compound semiconductor device and manufacturing method thereof Compound semiconductor device and manufacturing method thereof

2011-08-23

2011-08-23

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S167000, C438S285000, C438S518000, C438S590000, C438S604000, C257S076000, C257SE29081, C257SE21403

Reexamination Certificate

active

08003452

ABSTRACT:
A compound semiconductor device includes a carrier transit layer formed over a substrate; a carrier supply layer formed over the carrier transit layer; a first metal film and a second metal film formed over the carrier supply layer; a first Al comprising film formed over the first metal film; a second Al comprising film formed over the second metal film; a first Au comprising film formed over the first metal film and is free of direct contact with the first Al comprising film; a second Au comprising film formed over the second metal film and free of direct contact with the second Al comprising film; and a gate electrode that is located over the carrier supply layer between the first metal film and the second metal film.

REFERENCES:
patent: 6417519 (2002-07-01), Imanishi et al.
patent: 6861679 (2005-03-01), Otsuka et al.
patent: 2008/0197359 (2008-08-01), Imanishi et al.
patent: 2008/0204140 (2008-08-01), Kikkawa et al.
patent: 2002-359256 (2002-12-01), None
patent: 2006-165207 (2006-06-01), None

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