Compound semiconductor device and fabrication method

Details Compound semiconductor device and fabrication method Compound semiconductor device and fabrication method

1998-03-16

2000-03-14

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438182, 438579, H01L 21338

Patent

active

060372001

ABSTRACT:
A WSi film is deposited on a semi-insulative GaAs substrate. Thereafter, a first Al mask and a second SiO.sub.2 mask are formed such that these two masks overlap on the WSi film. A SF.sub.6 /CF.sub.4 mixture, which contains a gas of SF.sub.6 in an amount of more than 20%, is used to dry-etch the WSi film. The WSi film is T-shaped, in other words the WSi film becomes gradually downwardly narrower in lateral length. The second mask is stripped. A .GAMMA.-shaped gate electrode is formed by means of an anisotropic etching process. Subsequently, an isotropic etching process is carried out to reduce the gate length of the electrode down to 0.5 .mu.m or less. Silicon ions are implanted to form individual n' layers. A through film is deposited. Silicon ions are implanted to form individual n.sup.+ layers.

REFERENCES:
patent: 4698899 (1987-10-01), Kakihana
patent: 4774200 (1988-09-01), Nakajima et al.
patent: 4997779 (1991-03-01), Kohno

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