Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1991-05-09

1992-09-01

Larkins, William D.

357 34, 357 56, H01L 2973, H01L 29203

Patent

active

051443767

ABSTRACT:
A compound semiconductor device includes a semi-insulating substrate having a mesa structure defined by recess-etched portions along each side. A collector layer, base layer, emitter layer, and an emitter contact layer are formed sequentially on the recess-etched portions and on the mesa structure. As a result, the collector layer of the mesa structure and the emitter contact layer of the recess portions are horizontally self-aligned to form a collector. Further, the base layer of the mesa structure and a base contact layer formed on the emitter contact layer of the recess portions are horizontally self-aligned to form a base.

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