Compound semiconductor crystal growing method

Details Compound semiconductor crystal growing method Compound semiconductor crystal growing method

1992-08-04

1994-03-22

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 81, 437107, 437133, 437141, 148DIG57, H01L 21203

Patent

active

052960889

ABSTRACT:
A compound semiconductor crystal growing method includes the steps of (a) setting a substrate having a substrate surface in a reaction chamber, and (b) supplying a material gas of a compound semiconductor which is to be grown in the form of a crystal on the substrate surface within the reaction chamber and a control gas to the reaction chamber under a predetermined condition, and controlling the supply of the control gas to control an adsorption rate of the material gas on the substrate surface. The control gas makes competitive adsorption with the material gas on the substrate surface but makes no chemical reaction such that no continual accumulation on the substrate surface occurs under the predetermined condition. The competitive adsorption is defined as a phenomenon in which the material gas and the control gas compete and become adsorped on the substrate surface.

REFERENCES:
patent: 4975388 (1990-12-01), Guedon et al.
Hans Luth "Understanding of Surface Chemistry of III-V MOCVD Reactants", Jr. Vac. Sci & Tech (A), vol. 7 (1989), 696-700.

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