Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-20
1996-10-22
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257378, 257474, 257477, H01L 2976, H01L 2994, H01L 31062, H01L 27095
Patent
active
055679692
ABSTRACT:
Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field effect transistor pair, each including a source and a drain region with a gate contact positioned therebetween, ohmic contacts to the sources, and a rectifying junction contact to each of the drain regions. The gates of the two transistors are interconnected and function as the input terminal, and the two rectifying contacts are interconnected as the output of the device. The structure includes a semiconductor substrate having slow diffusant dopants therein or implanted metal ions of cobalt, molybdenum, or tungsten. The structure further includes an epitaxial semiconductor layer with resistance on the order of 0.5 to 1.0 ohm cm and a thickness of 1.5 to 5.0 .mu.m. The device regions for the field effect transistor pair are formed in the epitaxial semiconductor layer. Current from a positive voltage source is applied through the substrate to the source of a P-channel field effect transistor, thereby reducing switch back effect.
REFERENCES:
patent: 4920399 (1990-04-01), Hall
patent: 5021858 (1991-06-01), Hall
patent: 5060044 (1991-10-01), Tomassetti
patent: 5168341 (1992-12-01), Kumagai et al.
Loke Steven H.
Woodward Henry K.
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