Compound cell spin-torque magnetic random access memory

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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Details

C365S158000, C365S148000, C365S130000, C365S225500, C365S243500

Reexamination Certificate

active

07898849

ABSTRACT:
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

REFERENCES:
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patent: 2009/0273972 (2009-11-01), Han et al.
I.N. Krivorotov at al., REPORTS “Time-Domain Measurements of Nonomagnet Dynamics Driven by Spin-Transfer Torques”, Jan. 14, 2005, vol. 307, Science, pp. 228-231. www.sciencemag.org.
J.A. Katine et al., “Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars”, vol. 84, No. 14, Physical Review Letters Apr. 3, 2000 The American Physical Society pp. 3149-3152.

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