Static information storage and retrieval – Systems using particular element – Magnetic thin film
C365S158000, C365S148000, C365S130000, C365S225500, C365S243500
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
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Clinton Thomas William
Byrne Harry W
Campbell Nelson Whipps LLC
Seagate Technology LLC
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