Coherent light generators – Particular beam control device – Mode locking
Patent
1995-02-06
1996-10-01
Scott, Jr., Leon
Coherent light generators
Particular beam control device
Mode locking
372 20, 372 22, 372 82, 372 97, 372 98, 372 92, H01S 3098
Patent
active
055616763
ABSTRACT:
The invention is for a new type of an efficient and compact laser system, based on semiconductor gain medium, which produces high peak power. The laser system comprises: a compound cavity laser defined by first and second reflective elements; a developing structure, having a first end containing the first reflective element and a second end, being disposed in the compound cavity laser and being responsive to an RF frequency signal within a preselected RF frequency range for developing and reflecting from the first reflective element modelocked laser pulses at a selected wavelength; a first amplifier disposed between the developing structure and the second reflective element and being responsive to the reflected modelocked laser pulses from the developing structure for amplifying the modelocked laser pulses at the selected wavelength, the first amplifier having an end containing the second reflective element for transmitting a first portion of the amplified modelocked laser pulses therethrough and for reflecting a second portion of the amplified modelocked laser pulses back toward the developing structure; and a nonlinear element for converting the first portion of the amplified modelocked laser pulses from said first amplifier to amplified modelocked laser pulses at a desired frequency-converted wavelength.
REFERENCES:
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Goldberg et al; "High-Power Near-Diffractio-Limited Large-Area Traveling e Semiconductor Amplifiers"; IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993.
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Publication, "High-Power, Near-Diffraction-Limited Large-Area Traveling-Wave Semiconductor Amplifiers", by Lew Goldberg et al., IEEE J. Quantum Electronics, vol. 29, No. 6, pp. 2028-2043 (Jun. 1993).
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Publication, "1 W CW, Diffraction-Limited, Tunable External-Cavity Semiconductor Laser", by D. Mehuys et al., Electronics Letters, vol. 29, No. 14, pp. 1254-1255 (8 Jul. 1993).
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Jameson George
Jr. Leon Scott
McDonnell Thomas E.
The United States of America as represented by the Secretary of
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