Compositions for preparing low dielectric materials

Details Compositions for preparing low dielectric materials Compositions for preparing low dielectric materials

2007-11-13

2007-11-13

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C438S787000, C257SE21261, C257SE21273

Reexamination Certificate

active

11484049

ABSTRACT:
Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

REFERENCES:
patent: 5905117 (1999-05-01), Yokotsuka et al.
patent: 6126733 (2000-10-01), Wallace et al.
patent: 6329017 (2001-12-01), Liu et al.
patent: 6376634 (2002-04-01), Nishikawa et al.
patent: 6406794 (2002-06-01), Shiota et al.
patent: 6495478 (2002-12-01), Jang
patent: 6495479 (2002-12-01), Wu et al.
patent: 6576568 (2003-06-01), Mandal et al.
patent: 2002/0042210 (2002-04-01), Mandal et al.
patent: 2002/0189495 (2002-12-01), Hayashi et al.
patent: 1088868 (2001-04-01), None
patent: 1090967 (2001-04-01), None
patent: 1117102 (2001-07-01), None
patent: 1123753 (2001-08-01), None
patent: 1127929 (2001-08-01), None
patent: 1142832 (2001-10-01), None
patent: 1197998 (2002-04-01), None
patent: 1249846 (2002-10-01), None
patent: WO 0027254 (2000-05-01), None
patent: WO 0186709 (2001-11-01), None
Wang, S., et al.,Advanced Processing: CMP of Cu/low-k and Cu/ultralow-k layers, Solid State Technol., Sep. 2001.
Lin, S., et al.,Low-k Dielectrics Characterization for Damascene Integration, International Interconnect Technology Conference, Burlingame, CA, Jun. 2001.
Lu, Y., et al.,Evaporation-Induced Self-Assembly of Hybrid Bridged Silsesquioxane Film and Particulate Mesophases with Integral Organic Functionality, J. Am. Chem. Soc. 2000, 122, 5258-5261.
Golden, J. H., et al.,Designing Porous Low-k Dielectrics, Semiconductor International, May 2001.
Peters, L., Industry Divides on Low-k Dielectric Choices, Semiconductor International, Jul. 2001.
Jin, C., et al.,Characterization and Integration of Porous Extra Low-k(XLK)Dielectrics, International Interconnect Technology Conference, San Francisco, CA, Jun. 2000.
Thomas, M. E.,Spin-on Stacked Films for Low-keff Dielectrics, Solid State Technol., Jul. 2001.
Thanawala, S., et al.,Reduction in the Effective Dielectric Constant of Integrated Interconnect Structures Through an All-Spin-On Strategy, Honeywell Technical Reports.
Ramos, T., et al.,Mechanical and Electrical Properties of Nanoglass™ Nanoporous Silica as a Function of Porosity, Honeywell Technical Report.
Cook, R. F., et al.,Stress-Corrosion Cracking of Low-Dielectric-Constant Spin-On-Glass Thin Films, J. Electrochem. Soc. 1999, 146(12), 4439-4448.
Ro, H. W., et al.,Synthesis and Characterization of Polysilsesquioxane Copolymers for Low Dielectric Applications, Polymer Preprints 2001, 42(2), 889.
Yang, S., et al.,Molecular Templating of Nanoporous Ultralow Dielectric Constant(=1.5)Organosilicates by Tailoring the Microphase Separation of Triblock Copolymers, Chem. Mater. 2001, 13, 2762-2764.
Yang, S., et al.,Nanoporous Ultralow Dielectric Constant Organosilicates Templated by Triblock Copolymers, Chem. Mater. 2002, 14, 369-374.
Lynn, J. L., et al.,Surfactants, in Kirk-Othmer Encyclopedia of Chemical Technology, Copyright © 1997 by John Wiley & Sons, Inc. DOI: 10.1002/0471238961.1921180612251414.a01. Article Online Posting Date: Dec. 4, 2000.
Glass, J. E.,Water-Soluble Polymers, in Kirk-Othmer Encyclopedia of Chemical Technology; John Wiley & Sons, Inc., 1988. DOI: 10.1002/0471238961.2301200507120119.a01. Article Online Posting Date: Dec. 4, 2000.
Brown, E, S., et al.,Glycols: Ethylene Glycol and Propylene Glycol, in Kirk-Othmer Encyclopedia of Chemical Technology, 3rded.; John Wiley & Sons: New York, 1980; vol. 11.p. 953.
Kingery, W. D., et al.,Introduction to Ceramics, 2nd ed.; John Wiley: New York, 1976; pp. 947ff.
Kingery, W. D., et al.,Introduction to Ceramics, 2nd ed.; John Wiley: New York, 1976; pp. 773ff.
Day, A.R., et al.,The Elastic Moduli of a Sheet Containing Circular Holes, J. Mech. Phys. Solids 1992, 40, 1031-1051.
Ramos, T., et al.,Nanoporous Silica for Low k Dielectrics, Mater. Res. Soc. Symp. Proc. 1997, 443, 91-98.
Bremmer, J. N. ,A New Class of Insulating Materials: Emergence of Ultralow-k, Solid State Technol., Sep. 20001.
Kingery,-W. D., et al.,Introduction to Ceramics, 2nd ed.; John Wiley: New York, 1976; equation 18.56, p. 948.
Oliver, W.-C.,J. Mater. Res. 1992, 7, 1564.—Chem . Mater. 2001, 13, 1848.

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