Compositions for chemical mechanical polishing silica and...

Details Compositions for chemical mechanical polishing silica and... Compositions for chemical mechanical polishing silica and...

Filed on

2007-11-20

Date issued

2007-11-20

Examiner

Tran, Binh X. (Department: 1765)

Patent Class

Semiconductor device manufacturing: process

SubClass

Chemical etching

SubSubClass

Combined with the removal of material by nonchemical means

Other Related Categories

C438S693000, C438S700000, C252S079400, C216S089000

Type

Reexamination Certificate

Status

active

Patent number

11446936

Description

ABSTRACT:
The present invention provides a method of manufacturing a composition for polishing silica and silicon nitride on a semiconductor substrate. The method comprises ion-exchanging carboxylic acid polymer to reduce ammonia and combining by weight percent 0.01 to 5 of the ion-exchanged carboxylic acid polymer with 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 abrasive, and balance water.

REFERENCES:
patent: 6021679 (2000-02-01), Li et al.
patent: 6228280 (2001-05-01), Li et al.
patent: 6506341 (2003-01-01), Li et al.
patent: 6899784 (2005-05-01), Li et al.
patent: 2005/0108947 (2005-05-01), Mueller et al.

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