Compositions for anti-reflective light absorbing layer and...

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

Reexamination Certificate

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C430S313000, C430S326000, C430S512000, C430S514000

Reexamination Certificate

active

06838223

ABSTRACT:
A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed. The anti-reflective layer and the photoresist layer are simultaneously developed.

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patent: 6451503 (2002-09-01), Thackeray et al.
patent: 20030194635 (2003-10-01), Mulligan

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