Compositions and methods for CMP of phase change alloys

Details Compositions and methods for CMP of phase change alloys Compositions and methods for CMP of phase change alloys

2011-03-01

2011-03-01

Vinh, Lan (Department: 1713)

Compositions

Etching or brightening compositions

C252S079500, C438S693000, C216S106000

Reexamination Certificate

active

07897061

ABSTRACT:
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.

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