Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-17
2010-06-01
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S625000, C438S643000, C438S656000, C438S675000, C438S685000, C257SE21584
Reexamination Certificate
active
07727882
ABSTRACT:
A diffusion barrier film includes a layer of compositionally graded titanium nitride, having a nitrogen-rich portion and a nitrogen-poor portion. The nitrogen-rich portion has a composition of at least about 40% (atomic) N, and resides closer to the dielectric than the nitrogen-poor portion. The nitrogen-poor portion has a composition of less than about 30% (atomic) N (e.g., between about 5-30% N) and resides in contact with the metal, e.g., copper. The diffusion barrier film can also include a layer of titanium residing between the layer of dielectric and the layer of compositionally graded titanium nitride. The layer of titanium is often partially or completely converted to titanium oxide upon contact with a dielectric layer. The barrier film having a compositionally graded titanium nitride layer provides excellent diffusion barrier properties, exhibits good adhesion to copper, and reduces uncontrolled diffusion of titanium into interconnects.
REFERENCES:
patent: 4492620 (1985-01-01), Matsuo et al.
patent: 4609903 (1986-09-01), Toyokura et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5194398 (1993-03-01), Miyachi et al.
patent: 5961791 (1999-10-01), Frisa et al.
patent: 5962923 (1999-10-01), Xu et al.
patent: 6045666 (2000-04-01), Satitpunwaycha et al.
patent: 6054382 (2000-04-01), Hsu et al.
patent: 6093966 (2000-07-01), Venkatraman et al.
patent: 6140223 (2000-10-01), Kim et al.
patent: 6191033 (2001-02-01), Liao et al.
patent: 6217721 (2001-04-01), Xu et al.
patent: 6235163 (2001-05-01), Angelo et al.
patent: 6333547 (2001-12-01), Tanaka et al.
patent: 6337151 (2002-01-01), Uzoh et al.
patent: 6342448 (2002-01-01), Lin et al.
patent: 6350688 (2002-02-01), Liu et al.
patent: 6541374 (2003-04-01), de Felipe et al.
patent: 6566246 (2003-05-01), de Felipe et al.
patent: 6569783 (2003-05-01), Uzoh et al.
patent: 6841044 (2005-01-01), Ruzic
patent: 6995471 (2006-02-01), Shue et al.
patent: 7041595 (2006-05-01), Chopra
patent: 2001/0039113 (2001-11-01), Blalock et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2005/0085070 (2005-04-01), Park
patent: 2005/0186793 (2005-08-01), Omoto et al.
patent: 2005/0255700 (2005-11-01), Gopalraja et al.
patent: 2007/0020922 (2007-01-01), Chiang et al.
patent: 2007/0193982 (2007-08-01), Brown et al.
patent: 2007/0200243 (2007-08-01), Kraus et al.
Makoto Ueki, Masayuki Hiroi, Nobuyuki Ikarashi, Takahiro Onomdera, Naoya Furutake, Naoya Inoue, Yoshihiro Hayashi, Effects of Ti Addition on Via Reliability in Cu Dual Damascene Interconnects, IEEE Translations on Electron Devices, vol. 51, No. 11, Nov. 2004.
W. Wu, H-J Wu, G. Dixit, R. Shaviv, M. Gao, T. Mountsier, G. Harm, A. Dulkin, N. Fuchigami, S. K. Kailasam, E. Klawuhn, R. H. Havemann, “Ti-based Barrier for Cu Interconnect Applications”, International Interconnect Technology Conference paper on Jun. 1, 2008.
G. Zhong, J. Hopwood “Ionized Titanium Deposition into High tAspect Ratio Vias and Trenches”, J. Vac. Sci. Technol. B 17(2), Mar./Apr. 1999, © 1999 American Vacuum Society, pp. 405-409.
Chen, Xiaomeng; Frisch, Harry L.; Kaloyeros, Alain E.; Arkles, Barry and Sullivan, John, “Low Temperature Plasma-Assisted Chemical Vapor Deposition of Tantalum Nitride from Tantalum Pentabromide for Copper Metallization,” Jan./Feb. 1999,J. Vac. Sci. Technol., B 17(1), pp. 182-185.
Cheng, Peter F.; Rossnagel, S.M. and Ruzic, David N., “Directional Deposition of Cu into Semiconductor Trench Structures Using Ionized Magnetron Sputtering,” Mar./Apr. 1995,J. Vac. Sci. Technol., B 13(2), pp. 203-208.
Cho, Kwang-Nam; Han, Chang-Hee; Noh, Kyung-Bong; Oh, Jae-Eung; Paek, Su-Hyoun; Park, Chang-Soo; Lee, Sang-In; Lee, Moon Yong and Lee, Jong Gil, “Remote Plasma-Assisted Metal Organic Chemical Vapor Deposition of Tantalum Nitride Thin Films with Different Radicals,” Dec. 1998,Jpn. J. Appl. Phys., vol. 37 (1998), pp. 6502-6505.
Endle, J.P.; Sun, Y-M.; White, J.M. and Ekerdt, J.G., “X-Ray Photoelectron Spectroscopy Study of TiN Films Produced with Tetrakis (dimethylamido) Titanium and Selected N-Containing Precursors on SiO2,” May/Jun. 1998,J. Vac. Sci. Technol., A 16(3), pp. 1262-1267.
Green, K.M.; Hayden, D.B.; Juliano, D.R. and Ruzic, D.N., “Determination of Flux Ionization Fraction Using a Quartz Crystal Microbalance and a Gridded Energy Analyzer in an Ionized Magnetron Sputtering System,” Dec. 1997,Rev. Sci. Instrum., 68 (12), pp. 4555-4560.
Han, Chang-Hee; Cho, Kwang-Nam; Oh, Jae-Eung; Paek, Su-Hyoun; Park, Chang-Soo; Lee, Sang-In; Lee, Moon Yong and Lee, Jong Gil, “Barrier Metal Properties of Amorphous Tantalum Nitride Thin Films Between Platinum and Silicon Deposited Using Remote Plasma Metal Organic Chemical Vapor Method,” May 1998,Jpn. J. Appl. Phys., vol. 37 (1998), Pt. 1, No. 5A, pp. 2646-2651.
Hayden, D.B.; Juliano, D.R.; Green, K.M., Ruzic, D.N.; Weiss, C.A.; Ashtiani, K.A. and Licata, T.J., “Characterization of Magnetron-Sputtered Partially Ionized Aluminum Deposition,” Mar./Apr. 1998,J. Vac. Sci. Technol., A 16(2), pp. 624-627.
Hayden, D.B.; Juliano, D.R.; Neumann, M.N.; Allain, M.C. and Ruzic, D.N., “Helion Plasma Source for Ionized Physical Vapor Deposition,” 1999,Surface and Coatings Technology, 120-121 (1999), pp. 401-404.
Klawuhn, E.; D'Couto, G.C.; Ashtiani, K.A.; Rymer, P.; Biberger, M.A. And Levy, K.B., “Ionized Physical-Vapor Deposition Using a Hollow-Cathode Magnetron Source for Advanced Metallization,” Jul./Aug. 2000,J. Vac. Sci. Technol., A 18(4), pp. 1546-1549.
Lee, Hoojeong; Sinclair, Robert; Li, Pamela and Roberts, Bruce, “The Failure Mechanism of MOCVD TiN Diffusion Barrier at High Temperature,” 1996,Mat. Res. Soc. Symp. Proc., vol. 324, pp. 279-284.
Lucovsky, Gerald; Tsu, David V. and Markunas, Robert J., “Formation of Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD),” Feb. 1990, inHandbook of Plasma Processing Technology, eds. Rossnagel, Cuomo and Westwood, Noyes Publications, pp. 387-408.
Musher, Joshua N. and Gordon, Roy G., “Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Tetrakis (diethylamido) Titanium and Ammonia,” Feb. 1996,J. Electrochem. Soc., vol. 143, No. 2, pp. 736-744.
Peng, Y.C.; Chen, L.J.; Hsieh, W.Y.; Yang, Y.R. and Hsieh, Y.F., “Structural and Electrical Properties of Chemical Vapor Deposition Tungsten Overgrowth on Physical Vapor Deposited and Metalorganic Chemical Vapor Deposited TiN Adhesion Layers,” Jul./Aug. 1998,J. Vac. Sci. Technol., B 16(4), pp. 2013-2018.
Reif, Rafael, Plasma Enhanced Chemical Vapor Deposition of Thin Films for Microelectronics, Feb. 1990, inHandbook of Plasma Processing Technology, eds. Rossnagel, Cuomo and Westwood, Noyes Publications, pp. 260-284.
Truong, C.M.; Chen, P.J.; Corneille, J.S.; Oh, W.S. and Goodman, D.W., “Low-Pressure Deposition of TiN Thin Films from a Tetrakis (diethylamido) Titanium Precursor,” 1995,J. Phys. Chem., 1995, 99, pp. 8831-8842.
Tsai, M.H.; Sun, S.C.; Tsai, C.E.; Chuang, S.H. and Chiu, H.T., “Comparison of the Diffusion Barrier Properties of Chemical-Vapor-Deposited TaN and Sputtered TaN Between Cu and Si,” May 1996,1J. Appl. Phys., 79 (9), pp. 6932-6938.
J.W. Elam, M. Shuisky, J.D. Ferguson, S.M. George, Surface chemistry and film growth TiN atomic layer deposition using TDMAT and NH3, © 2003 Elsevier Science B.V., pp. 145-156.
Kazuhide Abe, Syunichi Tokitoh, Shih-Chang Chen, Jun Kanamori, and Hiroshi Onoda, “Effect of Ti insertion between Cu and TiN Layers on electromigration reliability in Cu/(Ti)/TiN/Ti layered damascene interconnects”, IEEE 00CH37059. 38thAnnual International Reliability Physics Symposium, San Jose, California, 2000, pp. 333-338.
U.S. Office Action mailed on Jun. 15, 2004 for U.S. Appl. No. 10/289,237.
U.S. Office Action mailed on Jul. 31, 2002 for U.S. Appl. No. 09/862,539.
U.S. Office Action for U.S. Appl. No. 12/154,984 mailed Oct. 6, 2009.
D'Couto et
Dixit Girish
Jow Kenneth
Wu Wen
Yu Chentao
Lee Kyoung
Novellus Systems Inc.
Richards N Drew
Weaver Austin Villeneuve & Sampson LLP
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