Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-05-02
2006-05-02
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S749000, C134S001200, C134S001300, C252S079100, C252S079400
Reexamination Certificate
active
07037852
ABSTRACT:
A composition for stripping photoresist, methods of preparing and forming the same, a method of manufacturing a semiconductor device using the composition, and a method of removing a photoresist pattern from an underlying layer using the composition, where the composition may include an ethoxy N-hydroxyalkyl alkanamide represented by the formula, CH3CH2—O—R3—CO—N—R1R2OH, an alkanolamine and a polar material. Raw materials of alkyl alkoxy alkanoate, represented by a chemical formula of R4—O—R3—COOR5, and alkanolamine, represented by a chemical formula of NHR1R2OH, may be mixed to form a mixture, which is stirred and cooled to obtain the composition. The composition may balance exfoliation and dissolution of photoresist patterns, and may potentially eliminate thread-type residues from remaining on a surface of an underlying layer after removing the photoresist patterns.
REFERENCES:
patent: 5334332 (1994-08-01), Lee
patent: 6508887 (2003-01-01), Park et al.
patent: 2782079 (2000-11-01), None
patent: 100335484 (2000-03-01), None
Hwang Jin-ho
Jun Pil-kwon
Kim Jin-sung
Park Dong-jin
Sohn Il-hyun
Harness & Dickey & Pierce P.L.C.
Nguyen Ha Tran
Samsung Electronics Co,. Ltd.
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