Composition for stripping photoresist and method for...

Details Composition for stripping photoresist and method for... Composition for stripping photoresist and method for...

2007-11-13

2007-11-13

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S197000, C257SE21008, C257S017000, C257S006000, C257S189000, C257S051000, C257SE31001, C257S126000

Reexamination Certificate

active

11217400

ABSTRACT:
The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.

REFERENCES:
patent: 4791043 (1988-12-01), Thomas et al.
patent: 5795702 (1998-08-01), Tanabe et al.
patent: 5827757 (1998-10-01), Robinson et al.
patent: 7098539 (2006-08-01), Gotoh et al.
patent: 2003/0144162 (2003-07-01), Chae et al.
patent: 2006/0183338 (2006-08-01), Kim et al.
patent: 2002-138272 (2002-05-01), None
patent: 2003-292993 (2003-10-01), None
patent: 2004-133161 (2004-04-01), None
patent: 2004-155822 (2004-06-01), None
patent: 1019860001841 (1986-10-01), None
patent: 1020040035368 (2004-07-01), None
patent: WO 03/107434 (2003-12-01), None
patent: WO 2004/053970 (2004-06-01), None

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