Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product
Reexamination Certificate
2006-09-21
2009-08-04
Walke, Amanda C. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Finishing or perfecting composition or product
C430S311000, C430S270100, C510S201000, C510S176000, C510S175000
Reexamination Certificate
active
07569336
ABSTRACT:
In a method of forming a pattern using a composition for removing photoresist, a layer is formed on a substrate, and then a photoresist pattern is formed on the layer. A portion of the layer exposed by the photoresist pattern is etched using the photoresist pattern as an etching mask to form the pattern on the substrate. Then, the photoresist pattern is removed using the composition including hydroxylamine, an alkanolamine-based compound, a morpholine-based compound, a polar solvent, a corrosion preventing agent, and water. The composition may effectively remove a photoresist pattern and etched residues without damaging the substrate and/or the pattern including metal, nitride, oxide and/or metal nitride.
REFERENCES:
patent: 6916772 (2005-07-01), Zhou et al.
patent: 2003/0158058 (2003-08-01), Yoon et al.
patent: 2003-068699 (2003-03-01), None
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patent: 2003021732 (2003-03-01), None
Kil Jun-Ing
Kim Kyong-Hee
Kim Min-Young
Koo Bon-Wang
Seo Hee
Daly, Crowley & Mofford & Durkee, LLP
Ram Technology Co., Ltd.
Walke Amanda C.
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