Composition for removing a photoresist, method of preparing...

Details Composition for removing a photoresist, method of preparing... Composition for removing a photoresist, method of preparing...

2006-04-19

2009-10-27

Del Cotto, Gregory R (Department: 1796)

Semiconductor device manufacturing: process

Chemical etching

C438S478000, C510S175000, C510S176000, C510S499000, C510S502000, C510S505000, C510S506000

Reexamination Certificate

active

07608540

ABSTRACT:
A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows:where R1is a hydroxyl group or a hydroxyalkyl group, and R2is a hydrogen atom or a hydroxyalkyl group.

REFERENCES:
patent: 2003/0022800 (2003-01-01), Peters et al.
patent: 2004/0266637 (2004-12-01), Rovito et al.
patent: 2003-0686699 (2003-03-01), None
patent: 2003-122028 (2003-04-01), None
patent: 2004-029346 (2004-01-01), None
patent: 10-2004-0032111 (2004-04-01), None

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