Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-07-26
2011-07-26
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S753000, C438S746000, C438S798000, C438S675000, C257SE21006, C257SE21051, C257SE21054, C257SE21058, C257SE21134, C257SE21170, C257SE21229, C257SE21278, C257SE21293, C257SE21329
Reexamination Certificate
active
07985700
ABSTRACT:
A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH3bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH3groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.
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Nakata Yoshihiro
Ozaki Shirou
Yano Ei
Fujitsu Limited
Nhu David
Westerman Hattori Daniels & Adrian LLP
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