Composition for film formation, insulating film,...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C438S790000

Reexamination Certificate

active

07999356

ABSTRACT:
According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof:in-line-formulae description="In-line Formulae" end="lead"?X13-mR1mSiR2SiR3nX23-n  (I)in-line-formulae description="In-line Formulae" end="tail"?wherein R1and R3represent a hydrogen atom or a monovalent substituent; R2represents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; X1and X2represent a hydrolysable group; and m and n are an integer of from 0 to 2.

REFERENCES:
patent: 11186996 (2001-01-01), None
patent: 2001096678 (2002-10-01), None
patent: 2001098183 (2002-10-01), None
patent: 2001140275 (2002-11-01), None
patent: 2002359239 (2002-12-01), None
patent: 2001388109 (2003-07-01), None
patent: 3718709 (2005-09-01), None
patent: 2006111738 (2006-04-01), None
patent: 2006241304 (2006-09-01), None
patent: 2007119488 (2007-05-01), None
patent: 2006176041 (2008-01-01), None
N. Tajima et al., Carbon-Rich SiOCH Films With Hydrocarbon Network Bonds For Low-k Dielectrics: First-Principles Investigation, IEEE International Interconnect Technology Conference, 2006, pp. 122-124.
N. Tajima et al., Carbon-Doped Silicon Oxide Films With Hydrocarbon Network Bonds For Low-k Dielectrics: Theoretical Investigations, Japanese Journal Of Applied Physics, 2007, vol. 46, No. 9A, pp. 5970-5974.
T. Takahashi et al., A Convenient One-Pot Procedure To Arylcyclobutenes From Arylacetylenes, J. Org. Chem., 1999, vol. 64, pp. 8706-8708.

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