Composition/bandgap selective dry photochemical etching of semic

Details Composition/bandgap selective dry photochemical etching of semic Composition/bandgap selective dry photochemical etching of semic

1985-10-11

1987-03-10

Cintins, Ivars

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156655, 156662, H01L 21306

Patent

active

046489380

ABSTRACT:
A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

REFERENCES:
patent: 3364087 (1968-01-01), Solomon et al.
patent: 4326911 (1982-04-01), Howard et al.
patent: 4331504 (1982-05-01), Chuang et al.
patent: 4351706 (1982-09-01), Chappell et al.
patent: 4404072 (1983-09-01), Kohl et al.
patent: 4454004 (1984-06-01), Hackleman et al.
Kern, "Chemical Etching . . . Gallium Phosphide", RCA Review 39, (1978), pp. 278-308.
Houle, "Non-Thermal Effects in Laser-Enhanced Etching of Silicon by XeF.sub.2 ", Chem. Phys. Lett. 95, (1983), pp. 5-8.

Affiliated with

Also associated with

Rating

Composition/bandgap selective dry photochemical etching of semic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composition/bandgap selective dry photochemical etching of semic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composition/bandgap selective dry photochemical etching of semic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1020426