Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2011-04-12
2011-04-12
Norton, Nadine G (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C252S079100, C252S079200, C252S079300, C252S079400, C216S037000, C438S689000, C438S692000
Reexamination Certificate
active
07922926
ABSTRACT:
The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the group consisting of glycine, alanine, iminodiacetic acid, and maleic acid, hydrogen peroxide, and water. The invention further provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
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Chinnathambi Selvaraj Palanisamy
Reiss Brian
Yeung Ping-Ha
Angadi Maki A
Cabot Microelectronics Corporation
Koszyk Francis J.
Norton Nadine G
Omholt Thomas E.
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