Composition and method for forming a doped oxide film

Details Composition and method for forming a doped oxide film Composition and method for forming a doped oxide film

1977-09-13

1979-05-01

Andrews, M. J.

Compositions

Compositions containing a single chemical reactant or plural...

Organic reactant

148188, 252950, 427 85, H01L 744

Patent

active

041522869

ABSTRACT:
A boron doped, silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution of a silicon compound and a boron compound, in a blend of two polar organic solvents, one of which has a low boiling point, and the other has a high boiling point, between 185.degree. and 300.degree. C. During a subsequent heating step, the high boiling point solvent redissolves any crystalline precipitate that forms during spin-on, giving a more uniform film for diffusion, and consequently a damage-free wafer surface.

REFERENCES:
patent: 3915766 (1975-10-01), Pollack et al.
patent: 3928225 (1975-12-01), Schafer

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