Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-28
2005-06-28
Webb, Gregory (Department: 1751)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S692000, C438S745000, C510S175000, C510S176000, C252S079100
Reexamination Certificate
active
06911393
ABSTRACT:
A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are comprised of a liquid carrier; a sulfur-bearing compounds capable of converting copper to copper sulfide; optionally, abrasive particles (polishing agent; optionally a chelating agent; optionally a buffering agent; optionally, a stopping compound; optionally, other additives; and optionally, a co-solvent. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.
REFERENCES:
patent: 4116699 (1978-09-01), Rooney
patent: 4233112 (1980-11-01), Valayil et al.
patent: 5073577 (1991-12-01), Anderson
patent: 5177908 (1993-01-01), Tuttle
patent: 5230184 (1993-07-01), Bukhman
patent: 5234867 (1993-08-01), Schultz et al.
patent: 5245790 (1993-09-01), Jerbic
patent: 5297364 (1994-03-01), Tuttle
patent: 5486129 (1996-01-01), Sandhu et al.
patent: 5562530 (1996-10-01), Runnels et al.
patent: 5953628 (1999-09-01), Kawaguchi
patent: 6068879 (2000-05-01), Pasch
patent: 6117783 (2000-09-01), Small et al.
patent: 6117795 (2000-09-01), Pasch
patent: 6709979 (2004-03-01), Komai et al.
patent: WO/9711484 (1997-03-01), None
patent: WO/0112741 (2001-02-01), None
patent: WO/01/44396 (2001-06-01), None
U.S. Appl. No. 09/091,932, filed Jun. 24, 1998, Kaisaki et al.
Production of Sulfide Minerals by Sulfate-Reducing Bacteria During Microbiologically Influenced Corrosion of Copper, McNeil, Jones, and Little.
Carroll Glenn
Janney Patrick K.
Martyak Nicholas M.
Nosowitz Martin
Arkema Inc.
Rudman Gilbert W.
Webb Gregory
LandOfFree
Composition and method for copper chemical mechanical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Composition and method for copper chemical mechanical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composition and method for copper chemical mechanical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3487060