Composite substrate and method of fabricating the same

Details Composite substrate and method of fabricating the same Composite substrate and method of fabricating the same

2006-06-23

2010-06-15

Purvis, Sue (Department: 2826)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257SE21122

Reexamination Certificate

active

07736993

ABSTRACT:
The invention specifically relates to methods of fabricating a composite substrate by providing a first insulating layer on a support substrate at a thickness of e1and providing a second insulating layer on a source substrate at a thickness of e2, with each layer having an exposed face for bonding; providing plasma activation energy in an amount sufficient to activate a portion of the thickness of the face of the first insulating layer emp1and a portion of the thickness of the face of the second insulating layer emp1; providing a final insulating layer by molecular bonding the activated face of the first insulating layer with the activated face of the second insulating layer; and removing a back portion of the source substrate while retaining an active layer comprising a remaining portion of the source substrate bonded to the support substrate with the final insulating layer interposed therein to form the composite substrate. The thicknesses e1, e2of the first and second insulating layers are sufficient to provide the final insulating layer with a thickness of 50 nanometers or less, and the plasma activation energy and respective thicknesses e1, e2of the first and second insulating layers are selected such that only respective thicknesses emp1and emp2of the faces of the first insulating layer and the second insulating layer are activated.

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