Composite structure with high heat dissipation

Details Composite structure with high heat dissipation Composite structure with high heat dissipation

2006-11-14

2006-11-14

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S406000, C438S409000, C438S456000, C438S457000, C438S458000, C257SE27120

Reexamination Certificate

active

07135383

ABSTRACT:
A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.

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Chapter 2: SOI Materials, Wafer Bonding, pp. 50-51.

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