Composite structure for electronic microsystems and method...

Semiconductor device manufacturing: process – Having diamond semiconductor component

Reexamination Certificate

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Reexamination Certificate

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07056763

ABSTRACT:
The invention relates to a composite structure for electronic microsystems and a method for producing this composite structure, with the composite structure being provided with a polycrystalline diamond layer (4) for heat withdrawal. The growth substrate (1) contains or forms a component layer (2) with the electronic microsystems, which are provided with binary or higher order component compound semiconductors. A protective layer (3), which encloses the component layer at least indirectly almost entirely, is placed between the component layer2and the diamond layer (4). A material is selected for the protective layer whose reactivity with the precursor materials present in the deposition of the diamond layer (4) by means of CVD, preferably by means of plasma CVD, is smaller than that of the component layer (2), and said protective layer. In order for the protective layer (3) to develop sufficient effectivity, it must be applied with an original thickness of at least 20 nm, preferably at least 50 nm and particularly preferred at least 100 nm.

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Alex Gicquel et al: Diamond Growth Mechanisms in Various Environments, Journal of The Electrochemical Society, 147 (6), pp. 2218-2226, 2000.
R. Ramesham, “Selective Growth And Characterization Of Doped Polycrystalline Diamond Thin Films”, Thin Solid Films, Elsevier-Sequoia S.A., vol. 229, No. 1, Jun. 5, 1993, pp. 44-50, XP000370672.

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