Composite stressors with variable element atomic...

Details Composite stressors with variable element atomic... Composite stressors with variable element atomic...

2006-09-06

2009-10-20

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

C257S190000, C257S192000, C257SE21431, C438S300000, C438S301000, C438S303000, C438S549000

Reexamination Certificate

active

07605407

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor adjacent the gate stack and having at least a portion in the semiconductor substrate, wherein the stressor comprises an element for adjusting a lattice constant of the stressor. The stressor includes a lower portion and a higher portion on the lower portion, wherein the element in the lower portion has a first atomic percentage, and the element in the higher portion has a second atomic percentage substantially greater than the first atomic percentage.

REFERENCES:
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