Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2006-10-31
2006-10-31
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S149000, C365S185080
Reexamination Certificate
active
07130224
ABSTRACT:
An object of the present invention is to provide a compound storage circuit that includes a storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and that is arranged to be capable of an instant-on function by storing information equal to storage information stored in the volatile storage circuit into the nonvolatile storage circuit, the compound storage circuit being capable of reducing power consumption, and a semiconductor device including the compound storage circuit.According to the present invention, in a compound storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and a semiconductor device including the compound storage circuit, a determination circuit for comparing first storage information stored in the volatile storage circuit with second storage information that has already been stored in the nonvolatile storage circuit when storage information stored in the volatile storage circuit is written into the nonvolatile storage circuit is provided, and the first storage information is written into the nonvolatile storage circuit only when the first storage information is not equal to the second storage information.
REFERENCES:
patent: 5193176 (1993-03-01), Brandin
patent: 6958937 (2005-10-01), Forbes
patent: 04-042496 (1992-02-01), None
patent: 05-289949 (1993-11-01), None
patent: 09-161489 (1997-06-01), None
patent: 2000-040037 (2000-02-01), None
patent: 2001-352475 (2001-12-01), None
International Search Report Nov. 4, 2003.
Mori Hironobu
Moriyama Katsutoshi
Okazaki Nobumichi
Hoang Huan
Kananen Ronald P.
Rader Fishman & Grauer
LandOfFree
Composite storage circuit and semiconductor device having... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Composite storage circuit and semiconductor device having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite storage circuit and semiconductor device having... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3654458