Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-29
2010-10-19
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07816250
ABSTRACT:
A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation.The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.
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Atkinson, Modelling the semisold procession of metallic alloys, Apr. 1, 2004, Progress in Materials Science 50 pp. 341-412.
Atkinson, H. V., “Modelling the Semisolid Processing of Metallic Alloys,” Progress in Materials Science 50 (2005), 341-412, www.elsevier.com/locate/pmatsci.
Deppisch Carl
Fitzgerald Tom
Hua Fay
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Perkins Pamela E
Smith Zandra
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