Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-12-03
2000-02-08
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 12, 156345, 430 24, 438944, H01L 21302, G03F 900, B28B 102
Patent
active
060228091
ABSTRACT:
A composite shadow ring for use in an etch chamber that does not generate contaminating oxygen gas when bombarded by a gas plasma and a method for using such composite shadow ring are presented. The composite shadow ring may have a structure of a body portion of a ring shape that is made of a material that is substantially of silicon dioxide and an insert portion which is intimately joined to the body portion and is adjacent to a plasma cloud in the etch chamber when the shadow ring is positioned juxtaposed to the wafer, the insert portion of the shadow ring may also have a ring shape and is eccentric with the body portion, it generally has a diameter smaller than a diameter of the body portion, the insert portion may be fabricated of a material that does not generate oxygen when bombarded by a fluorine-containing gas plasma. The body portion may have a crosssection of a rectangle which has an upper inner corner of the rectangle missing to form a cavity for receiving an insert member intimately therein. The insert portion may further have a cross-section of a rectangle. The insert portion may be advantageously made of a material that is substantially silicon.
REFERENCES:
patent: 5328722 (1994-07-01), Ghanayem et al.
patent: 5354382 (1994-10-01), Sung et al.
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5494523 (1996-02-01), Steger et al.
patent: 5695831 (1997-12-01), Miyazaki
Goudreau George
Taiwan Semiconductor Manufacturing Company , Ltd.
Utech Benjamin
LandOfFree
Composite shadow ring for an etch chamber and method of using does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Composite shadow ring for an etch chamber and method of using, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite shadow ring for an etch chamber and method of using will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1681210