Composite semiconductor substrate having a single crystal substr

Details Composite semiconductor substrate having a single crystal substr Composite semiconductor substrate having a single crystal substr

1994-08-24

1996-04-09

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257352, 257627, 257 12, 257183, H01L 2701, H01L 2904

Patent

active

055064337

ABSTRACT:
A silicon-on-insulator (SOI) structure having a single crystal layer of a group III-V compound semiconductor material contacting a single crystal substrate of sapphire such that a principal surface of the single crystal layer establishes an intimate contact with a corresponding principal surface of the single crystal substrate and the single crystal layer, and the single crystal substrate are bonded with each other while elevating a temperature.

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patent: 5231045 (1993-07-01), Miura et al.
Kasai et al., "Material and device properties of GaAs on sapphire grown by metalorganic chemical vapor deposition" J. Appl. Phys. 60(1), Jul. 1986, pp. 1-5.

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