Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Intervalley transfer
Patent
1994-03-07
1994-08-09
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Intervalley transfer
257 20, 257 21, 257 22, 257 96, 257194, 257200, 257 17, H01L 2714
Patent
active
053369017
ABSTRACT:
A semiconductor structure comprises a first material layer of a homopolar material having a conduction band that includes an L valley and a .GAMMA. valley such that the L valley has an energy level lower than the .GAMMA. valley when in a bulk crystal state, and a second material layer of a polar compound formed with an epitaxial relationship with respect to the first material layer; wherein the first material layer has a thickness such that there is formed first and second quantum levels respectively in correspondence to the .GAMMA. valley and the L valley such that: the second quantum level has an energy level higher than the first quantum level.
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Applied Physics Letters, vol. 42, No. 5, Mar. 1983, New York, US, pp. 463-465, Chin-an Chang et al. "Channeling Studies of Ga-GaAs Superlattices Grown by Molecular Beam Epitaxy".
Fujitsu Limited
Mintel William
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