Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-28
2006-03-28
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C148S033300, C257S758000
Reexamination Certificate
active
07018920
ABSTRACT:
A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.
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Goodner Michael D.
Meagley Robert P.
Fourson George
Intel Corporation
Toledo Fernando L.
Trop Pruner & Hu P.C.
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