Composite resist structures for submicron processing in electron

Details Composite resist structures for submicron processing in electron Composite resist structures for submicron processing in electron

1982-08-10

1984-06-26

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430271, 430272, 430296, 430326, 430278, G03C 178, G03C 196

Patent

active

044566778

ABSTRACT:
Composite resist structures are described for processing submicron electrc and optical circuits requiring very good pattern resolution between lines because of extremely close spacings between circuit elements. The present invention discloses matrix and layer structures wherein high atomic number (Z) material is used to confine the scattering of the electron beams in the resist. A low Z material is used in combination with a high Z material in the layered configuration to slow down electron velocities without creating a great number of scattered electrons.

REFERENCES:
patent: 3443944 (1969-05-01), Wise
patent: 3877950 (1975-04-01), Felten
patent: 3884698 (1975-05-01), Kakihama et al.
patent: 4008084 (1977-02-01), Ikeda et al.
patent: 4061814 (1977-12-01), Politycki
patent: 4132168 (1979-01-01), Peterson

Affiliated with

Also associated with

Rating

Composite resist structures for submicron processing in electron does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composite resist structures for submicron processing in electron, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite resist structures for submicron processing in electron will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2232747