Composite polymer dielectric film

Details Composite polymer dielectric film Composite polymer dielectric film

2005-11-08

2005-11-08

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S628000

Reexamination Certificate

active

06962871

ABSTRACT:
An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

REFERENCES:
patent: 3268599 (1966-08-01), Chow
patent: 3274267 (1966-09-01), Chow
patent: 3280202 (1966-10-01), Gilch
patent: 3288728 (1966-11-01), Gorham
patent: 3332891 (1967-07-01), Chow et al.
patent: 3342754 (1967-09-01), Gorham et al.
patent: 3349045 (1967-10-01), Gilch
patent: 3379803 (1968-04-01), Tittmann et al.
patent: 3503903 (1970-03-01), Shaw et al.
patent: 3509075 (1970-04-01), Niegish et al.
patent: 3626032 (1971-12-01), Norris
patent: 3694495 (1972-09-01), Norris
patent: 3940530 (1976-02-01), Loeb et al.
patent: 4117308 (1978-09-01), Boggs et al.
patent: 4518623 (1985-05-01), Riley
patent: 4823711 (1989-04-01), Kroneberger et al.
patent: 4996010 (1991-02-01), Modrek
patent: 5142023 (1992-08-01), Gruber et al.
patent: 5217559 (1993-06-01), Moslehi et al.
patent: 5268202 (1993-12-01), You et al.
patent: 5320518 (1994-06-01), Stilger et al.
patent: 5475080 (1995-12-01), Gruber et al.
patent: 5482009 (1996-01-01), Kobayashi et al.
patent: 5538758 (1996-07-01), Beach et al.
patent: 5572884 (1996-11-01), Christensen et al.
patent: 5639512 (1997-06-01), Nonaka et al.
patent: 5648006 (1997-07-01), Min et al.
patent: 5879808 (1999-03-01), Wary et al.
patent: 5945170 (1999-08-01), Kozak et al.
patent: 5958510 (1999-09-01), Sivaramakrisham
patent: 6051321 (2000-04-01), Lee et al.
patent: 6086952 (2000-07-01), Lang et al.
patent: 6130171 (2000-10-01), Gomi
patent: 6140456 (2000-10-01), Foggiator et al.
patent: 6144802 (2000-11-01), Kim
patent: 6265320 (2001-07-01), Shi et al.
patent: 6302874 (2001-10-01), Zhang
patent: 6362091 (2002-03-01), Andideh et al.
patent: 6455443 (2002-09-01), Eckert et al.
patent: 6495208 (2002-12-01), Desu et al.
patent: 6703462 (2004-03-01), Lee
patent: 6797343 (2004-09-01), Lee
patent: 2002/0050659 (2002-05-01), Toreki et al.
patent: 2002/0120083 (2002-08-01), Lee
patent: 2003/0051662 (2003-03-01), Lee
patent: 2003/0072947 (2003-04-01), Lee
patent: 2003/0143341 (2003-07-01), Lee
patent: 2003/0188683 (2003-10-01), Lee
patent: 2003/0195312 (2003-10-01), Lee
patent: 2003/0196680 (2003-10-01), Lee
patent: 2003/0198578 (2003-10-01), Lee
patent: 0 349 032 (1990-01-01), None
patent: 0 523 479 (1993-01-01), None
patent: 0 856 503 (1998-08-01), None
patent: 650 947 (1951-03-01), None
patent: 673 651 (1952-06-01), None
patent: WO 97/15699 (1997-05-01), None
patent: WO 97/15951 (1997-05-01), None
patent: WO 97/42356 (1997-11-01), None
patent: WO 99/21705 (1999-05-01), None
patent: WO 99/21706 (1999-05-01), None
patent: WO 99/21924 (1999-05-01), None
patent: WO 99/22043 (1999-05-01), None
Parylene Copolymres, Taylor et al.,Low Dielectric Constant Materials III, pp. 197-205, 1997.
Finer Copper Wires Make for Faster Integrated Circuits, Preuss,Research News, pp. 1-3, Apr. 5, 1999.
Study of Hydrogen Annealing of Ultrahigh Molecular Weight Polyethylene Irradiated with High-Energy Protons, Wilson et al.,Journal of Materials Research, vol. 14, No. 11, Nov. 1999.
A Novel Oxazole Based Low k Dielectric Addresses Copper Damascene Needs, Schmid et al.,Semiconductor Fabtech, 12thEdition, pp. 231-235, Jul. 2000.
The Effect of Water Desorption and Organosilane Coupling Agents on the Adhesion of Poly(p-xylylene)Films to a Silicon Wafer Surface, Lightfoot et a l.,Journal of Materials Science: Materials in Electronics, vol. 12, pp. 581-586, 2001.
Current Technical Trends: Dual Damascene & Low-k Dielectrics, Healey on behalf of Threshold Systems, pp. 1-6, © 2002.
Chow et al.,Poly(a,a,a′,a′-tetrafluoro-p-xylylene),Journal of Applied Polymer Science, vol. 13, No. 9, pp. 2325-2332, 1969.
Chow et al.,The Synthesis of 1,1,2,2,9,9,10,10-octafluorou2, 2Paracyclophane, Journal of Organic Chemistry, vol. 35, No. 1, pp. 20-22, 1970.
Iwamoto et al.,Crystal Structure of Poly-p-xylylene. 1. The a Form, Jour. Polymer. Sci.Polymer. Phys. Ed., vol. 11, pp. 2403-2411, 1973.
Iwamoto et al.,Crystallization During Polymerization of Poly-p-xylene. III. Crystal Structure and Molecular Orientation as a Function of Temperature, Journal of Polymer Science Polymer. Phys. Ed., vol. 13, pp. 1925-1938, 1975.
Lee,Transport Polymerization of Gaseous Intermediates and Polymer Crystal Growth, J. Macromol. Sci. Rev. Macromol. Chem., C16(1), p. 79-127, 1977-78.
Sharma et al.,Optimizing Poly(chloro-p-Xylelene)or Parylene C Synthesis, Journal of Applied Science, vol. 36, No. 7, pp. 1555-1565, Sep. 20, 1988.
Lee,Polyimides, Polyquinolines and Polyquinoxalines: Tg-Structure Relationships, Journal of Macromolecular Science, Part C-Polymer Reviews(formerlyJournal of Macromolecular Science, Part C- Reviews in Macromolecular Chemistry and Physics) vol. 29(4), p. 431, 1989.
Lang,Vapor Deposition of Very low k Polymer Films, Poly(Naphthalene),Poly(Fluorinated Naphthalene),Materials Research Society Symposium Proceedings, vol. 381, pp. 45-50, Apr. 17, 1995.
Wary et al.,Polymer Developed to be Interlayer Dielectric, Semi-Conductor International, pp. 211-216, Jun. 1996.
Wunderlick,Crystal Nucleation, Growth, Annealing, Macromolecular Physics, vol. 1-2, pp. 242-243, 246-247, 1996.
Greiner,Poly(1,4-xylylene)s: Polymer Films by Chemical Vapour Deposition, Trends in Polymer Science, vol. 5, No. 1, pp. 12-16, 1997.
Harrus et al.,Parylene Af-4: A Low eRMaterial Candidate for ULSI Multilevel Interconnect Applications, Material Research Society Symposium Proceedings, vol. 443, 1997.
Plano et al.,The Effect of Deposition Conditions on the Properties of Vapor-Deposited Parylene Af-4 Films, Material Research Society Symposium Proceedings, vol. 476, pp. 213-218, 1997.
Ryan et al.,Effect of Deposition and Annealing on the Thermomechanical Properties of Parylene Films, Material Research Society Symposium Proceedings, vol. 476, pp. 225-230, 1997.
Yang et al.,High Deposition Rate Parylene Films, Journal of Crystal Growth, vol. 183, No. 3, pp. 385-390, 1998.
Mathur et al.,Vapor Deposition of Parylene-F Using Hydrogen as Carrier Gas, Journal of Materials Research, vol. 14, No. 1, pp. 246-250, 1999.
Morgen et al.,Morphological Transitions in Fluorinated and Non-Fluorinated Parylenes, Material Research Society Symposium Proceedings, vol. 565, pp. 297-302, 1999.
Brun,100nm: The Undiscovered Country, Semiconductor International, p. 79, Feb. 2000.
Peng and McGivern,Quantum Yields and Energy Partitioning in the UV Photodissociation of Halon 2402, Journal of Chemical Physics, vol. 113, No. 17, pp. 7149-7157, 2000.
Rashed,Properties and Characteristics of Silicon Carbide, website publication (www.poco.com), POCO Graphite Inc., 2002.

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