Composite intermetal dielectric structure including low-k...

Details Composite intermetal dielectric structure including low-k... Composite intermetal dielectric structure including low-k...

2006-05-09

2006-05-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S435000, C438S624000, C438S631000, C438S637000, C438S778000, C438S958000, C428SFOR001

Reexamination Certificate

active

07041574

ABSTRACT:
A method of forming a composite intermetal dielectric structure is provided. An initial intermetal dielectric structure is provided, which includes a first dielectric layer and two conducting lines. The two conducting lines are located in the first dielectric layer. A portion of the first dielectric layer is removed between the conducting lines to form a trench. The trench is filled with a second dielectric material. The second dielectric material is a low-k dielectric having a dielectric constant less than that of the first dielectric layer.

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