Composite gate structure in an integrated circuit

Details Composite gate structure in an integrated circuit Composite gate structure in an integrated circuit

2007-02-27

2007-02-27

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S310000, C257S388000, C257S412000, C257SE29242, C257SE29272

Reexamination Certificate

active

11158764

ABSTRACT:
An integrated circuit having composite gate structures and a method of forming the same are provided. The integrated circuit includes a first MOS device, a second MOS device and a third MOS device. The gate stack of the first MOS device includes a high-k gate dielectric and a first metal gate on the high-k gate dielectric. The gate stack of the second MOS device includes a second metal gate on a high-k gate dielectric. The first metal gate and the second metal gate have different work functions. The gate stack of the third MOS device includes a silicon gate over a gate dielectric. The silicon gate is preferably formed over the gate stacks of the first MOS device and the second MOS device.

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