Composite dielectric films

Details Composite dielectric films Composite dielectric films

1997-08-19

1998-11-24

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257754, 257636, H01L 2358

Patent

active

058411860

ABSTRACT:
Composite TiO.sub.2 /Ta.sub.2 O.sub.5 films by in-situ sequential CVD deposition are presented for a storage capacitor of a three-dimensional cell in DRAM applications. The capacitor with the Ta.sub.2 O.sub.5 /TiO.sub.2 /Ta.sub.2 O.sub.5 alternating layer structure has comparable leakage current density and higher capacitance per unit area as compared to a capacitor with Ta.sub.2 O.sub.5 and TiO.sub.2 single layer structures.

REFERENCES:
patent: 4987102 (1991-01-01), Nguyen et al.
patent: 5406446 (1995-04-01), Peters et al.

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