Composite circuit of bipolar transistors and MOS transistors and

Details Composite circuit of bipolar transistors and MOS transistors and Composite circuit of bipolar transistors and MOS transistors and

1994-02-07

1994-11-08

Pascal, Robert J.

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Bipolar and fet

327433, 327379, 327387, 327208, H03K 1902

Patent

active

053629981

ABSTRACT:
A composite circuit device of bipolar transistors and MOS transistors has a series connection of an NPN transistor for pull-up and a PNP transistor for pull-down. The composite circuit device has independent base drive circuits so provided that the base of the NPN transistor for pull-up is electrically isolated from the base of the PNP transistor for pull-down during the on-off switching operation. The composite circuit device is also provided with base precharge circuitry for pre-charging the base of the PNP transistor during the off operation state thereof. A composite circuit is also provided with circuitry for enhancing the turn-on switching speed of the pull-down PNP transistor. Additionally, a composite circuit of bipolar transistors and MOS transistors is constituted by a switch having a high input impedance and low on-resistance which can be applied as a component of an electronic circuit.

REFERENCES:
patent: 4682054 (1987-07-01), McLaughlin
IEEE 1989 Bipolar Circuits and Technology Meeting Sep. 1989 pp. 229-232.
1990 Symposium or VLSI Circuits pp. 89-90 Jun. 1990.

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