Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-03-28
2011-10-18
Trinh, Hoa B (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23010
Reexamination Certificate
active
08039961
ABSTRACT:
One embodiment involves an article of manufacture that includes: a copper substrate plug with a front surface and a back surface; a catalyst on top of a single surface of the copper substrate plug; and a thermal interface material on top of the single surface of the copper substrate plug. The thermal interface material comprises: a layer of carbon nanotubes that contacts the catalyst, and a filler material located between the carbon nanotubes. The carbon nanotubes are oriented substantially perpendicular to the single surface of the copper substrate plug. The copper substrate plug is configured to be incorporated in a peripheral structure of a heat spreader or a heat sink. In another embodiment, the thermal interface material is on top of both the top and bottom surfaces of the copper substrate plug.
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Kroeze Roger L.
Ravindhran K. S.
Schwartz Peter
Suhir Ephraim
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Trinh Hoa B
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