Composite capacitor electrode for a DRAM cell

Details Composite capacitor electrode for a DRAM cell Composite capacitor electrode for a DRAM cell

1998-02-23

2000-11-07

Utech, Benjamin L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438398, 438706, 438712, H01L 2120, H01L 21311

Patent

active

061436178

ABSTRACT:
A process for creating a storage node electrode, for a DRAM cell, exhibiting increased surface area resulting from the formation of an agglomerated metal silicide layer, on the top surface of the storage node electrode, has been developed. The process features creating a polysilicon, storage node electrode shape, followed by the formation of an overlying, agglomerated titanium disilicide layer. The agglomerated titanium disilicide layer is formed from a RTA procedure, applied to a smooth titanium disilicide layer, located on the polysilicon, storage node electrode.

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